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25
25_C
55_C Crss
0.01
0.5 1.0 1.5 2.0 0 10 20 30 40 50
VGS Gate-to-Source Voltage (V) VDS Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
15.0 100
VDD = 25 V
I = 1.0 A
D
RL = 23 W
12.5
VGS = 0 to 10 V
ID = 1.0 A
10.0
VDS = 45 V
7.5 10
td(off)
72 V
tr
5.0
td(on)
2.5
tf
0 1
0 100 200 300 400 500 0.1 1 2
Qg Total Gate Charge (pC) ID Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661)
1.0
Duty Cycle = 0.5
0.2
Notes:
0.1
Single Pulse
PDM
0.1
0.05 t1
t2 t1
0.02
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJC = 20_C/W
0.01
3. TJM TC = PDMZthJC(t)
0.01
0.1 1.0 10 100 1 K 10 K
t1 Square Wave Pulse Duration (sec)
4 Siliconix
P-37655 Rev. B, 25-Jul-94
D
C Capacitance (pF)
I
Drain Current (mA)
t Switching Time (ns)
GS
V
Gate-to-Source Voltage (V)
Thermal Impedance
Normalized Effective Transient
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